tsa5888 low vcesat pnp transistor 1/5 version: b12 sot - 89 product summary bv cbo -50v bv ceo -40v i c -5.5a v ce(sat) -175mv @ i c / i b = -3.5a / -175ma features adoption of fbet and mbit processes. high current capacitance. low collector-to-emitter saturation voltage. high-speed switching. ultrasmall package facilitales miniaturization in end products. high allowable power dissipation. ordering information part no. package packing tsa5888cy rmg sot-89 1kpcs / 7 reel note: g denote for halogen free product absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -7.5 v collector current dc i c -5.5 a pulse -15 collector power dissipation p c 0.9 w operating junction temperature t j +150 o c operating junction and storage temperature range t stg - 55 to +150 o c note: for a device surface mounted on 15mm x 15mm x 16mm fr4 pcb electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit collector-base breakdown voltage i c = -100ua, i e = 0 bv cbo -50 -- -- v collector-emitter breakdown voltage i c = -10ma, i b = 0 bv ceo -40 -- -- v emitter-base breakdown voltage i e = -100ua, i c = 0 bv ebo -7.5 -- -- v collector cutoff current v cb = -40v, i e = 0 i cbo -- -- -20 ua emitter cutoff current v eb = -6v, i c = 0 i ebo -- -- -20 ua collector-emitter saturation voltage i c / i b = -2a / -40ma v ce(sat) 1 -- -175 -400 mv i c / i b = -3.5a / -175ma v ce(sat) 2 -- -175 -390 base-emitter saturation voltage i c / i b = -2a / -40ma v b e(sat) -- -0.9 -1.2 mv dc current transfer ratio v ce = -2v, i c = -10ma h fe 1 200 -- 560 transition frequency v ce =-10v, i e =50ma, f t -- 152 -- mhz output capacitance v cb = -10v, f=1mhz cob -- 53 -- pf turn-on time v cc = -10v,i c =-1a -ib1=ib2=-100ma ton -- 35 -- ns turn-off time toff -- 385 -- ns pin definition : 1. base 2. collector 3. emitter
tsa5888 low vcesat pnp transistor 2/5 version: b12 electrical characteristics curve (ta = 25 o c, unless otherwise noted) figure 1. dc current gain figure 2. v ce(sat) v.s. collector current figure 3. v be(sat) v.s. collector current figure 4. transition frequency vs. emitter current figure 5. cob vs. collector-base voltage figure 6. cib vs. emitter-base voltage
tsa5888 low vcesat pnp transistor 3/5 version: b12 electrical characteristics curve (ta = 25 o c, unless otherwise noted) figure 7. power dissipation vs. ambient temperature
tsa5888 low vcesat pnp transistor 4/5 version: b12 sot-89 mechanical drawing marking diagram y = year code m = mont h code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code sot-89 dimension dim millimeters inches min max min max a 4.40 4.60 0.173 0.181 b 1.50 1.7 0.059 0.070 c 2.30 2.60 0.090 0.102 d 0.40 0.52 0.016 0.020 e 1.50 1.50 0.059 0.059 f 3.00 3.00 0.118 0.118 g 0.89 1.20 0.035 0.047 h 4.05 4.25 0.159 0.167 i 1.4 1.6 0.055 0.068 j 0.35 0.44 0.014 0.017
tsa5888 low vcesat pnp transistor 5/5 version: b12 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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